JPH0334685B2 - - Google Patents
Info
- Publication number
- JPH0334685B2 JPH0334685B2 JP58174460A JP17446083A JPH0334685B2 JP H0334685 B2 JPH0334685 B2 JP H0334685B2 JP 58174460 A JP58174460 A JP 58174460A JP 17446083 A JP17446083 A JP 17446083A JP H0334685 B2 JPH0334685 B2 JP H0334685B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- transducer
- deposited
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000005284 excitation Effects 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 238000010897 surface acoustic wave method Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000000087 stabilizing effect Effects 0.000 claims description 10
- 239000007858 starting material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 21
- 239000011787 zinc oxide Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 235000007319 Avena orientalis Nutrition 0.000 description 1
- 241000209763 Avena sativa Species 0.000 description 1
- 235000007558 Avena sp Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DUBSDGFVYOMMLR-UHFFFAOYSA-N [Cr].[In].[Au] Chemical compound [Cr].[In].[Au] DUBSDGFVYOMMLR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum and gold Chemical class 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14502—Surface acoustic wave [SAW] transducers for a particular purpose
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/422,810 US4447754A (en) | 1982-09-24 | 1982-09-24 | Broad band surface acoustic wave edge deposited transducer |
US422810 | 1982-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5979621A JPS5979621A (ja) | 1984-05-08 |
JPH0334685B2 true JPH0334685B2 (en]) | 1991-05-23 |
Family
ID=23676486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58174460A Granted JPS5979621A (ja) | 1982-09-24 | 1983-09-22 | 表面音響波変換器およびその作成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4447754A (en]) |
EP (1) | EP0104740B1 (en]) |
JP (1) | JPS5979621A (en]) |
DE (1) | DE3381071D1 (en]) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0388406A (ja) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
US5173667A (en) * | 1991-02-19 | 1992-12-22 | Ford Motor Company | Acoustic wave transmission media delay line having internally disposed absorber channels |
US5339101A (en) * | 1991-12-30 | 1994-08-16 | Xerox Corporation | Acoustic ink printhead |
US5365770A (en) * | 1993-04-05 | 1994-11-22 | Ford Motor Company | Ultrasonic wave interferometers |
EP0905480B1 (en) | 1997-09-11 | 2005-04-27 | Honeywell Inc. | Solid liquid inter-diffusion bonding for ring laser gyroscopes |
EP1124328A1 (en) * | 2000-02-10 | 2001-08-16 | Lucent Technologies Inc. | A method of fabricating a zinc oxide based resonator |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3935564A (en) * | 1974-12-02 | 1976-01-27 | The Board Of Trustees Of Leland Stanford, Jr. University | Charge storage and monitoring apparatus utilizing acoustic waves |
US4019200A (en) * | 1975-06-11 | 1977-04-19 | Rockwell International Corporation | Monolithic surface acoustic wave signal storage device |
US4211948A (en) * | 1978-11-08 | 1980-07-08 | General Electric Company | Front surface matched piezoelectric ultrasonic transducer array with wide field of view |
US4288775A (en) * | 1979-11-09 | 1981-09-08 | Bennewitz Paul F | Device and method of manufacturing a relative humidity sensor and temperature sensor |
-
1982
- 1982-09-24 US US06/422,810 patent/US4447754A/en not_active Expired - Lifetime
-
1983
- 1983-08-16 DE DE8383304744T patent/DE3381071D1/de not_active Expired - Lifetime
- 1983-08-16 EP EP83304744A patent/EP0104740B1/en not_active Expired - Lifetime
- 1983-09-22 JP JP58174460A patent/JPS5979621A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0104740B1 (en) | 1990-01-03 |
EP0104740A2 (en) | 1984-04-04 |
EP0104740A3 (en) | 1986-02-19 |
US4447754A (en) | 1984-05-08 |
JPS5979621A (ja) | 1984-05-08 |
DE3381071D1 (de) | 1990-02-08 |
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